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  Table of Contents 1.1 SEMICONDUCTOR DIODES . 3 1.2 INTRINSIC SEMICONDUCTOR . 3 1.3 EXTRINSIC SEMICONDUCTOR . 4 1.4 PN JUNCTION DIODE . 4 1.5 ZENER DIODE . 8 1.6 BREAKDOWNS IN DIODE . 9 2.1 BIPOLAR JUNCTION TRANSISTOR (BJT) . 10 2.2 TRANSISTOR BIASING .. 11 2.3 OPERATION OF NPN TRANSISTOR . 11 2.4 OPERATION OF PNP TRANSISTOR . 12 2.5 TYPES OF CONFIGURATION .. 12 2.6 CB CONFIGURATION .. 13 2.7 EARLY EFFECT OR BASE-WIDTH MODULATION .. 14 2.8 THERMAL RUN AWAY . 15 2.9 TRANSISTOR PARAMETERS . 15 2.10 CE CONFIGURATION .. 15 2.11 CC CONFIGURATION .. 18 2.12 COMPARISON .. 19 3.1 METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR (MOSFET or IGFET) . 20 3.2 ENHANCEMENT MOSFET . 20 3.3 DEPLETION MOSFET . 22 3.4 SILICON CONTROLLED RECTIFIER (SCR) . 24 4.1 PHOTOCONDUCTIVITY . 27 4.2 LIGHT DEPENDENT RESISTOR(LDR) OR PHOTORESISTOR: 27 4.3 PHOTODIODES . 28 4.4 AVALANCHE PHOTO DIODE (APD) . 29 4.5 PHOTOTRANSISTOR . 30 4.6 OPTOCOUPLER . 3...